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Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes

2019

We report on carrier injection features in light-emitting diodes (LEDs) based on nonintentionally doped-ZnO/p-GaN heterostructures. These LEDs consist of a ZnO layer grown by chemical-bath deposition (CBD) onto a p-GaN template without using any seed layer. The ZnO layer (~1- $\mu \text{m}$ thickness) consists of a dense collection of partially coalesced ZnO nanorods, organized in wurtzite phase with marked vertical orientation, whose density depends on the concentration of the solution during the CBD process. Due to the limited conductivity of the p-GaN layer, the recombination in the n-region is strongly dependent on the spreading length of the holes, ${L}_{h}$ , coming from the p-contact…

010302 applied physicsMaterials sciencebusiness.industryGallium nitrideHeterojunction01 natural sciencesSettore ING-INF/01 - ElettronicaElectronic Optical and Magnetic Materialslaw.inventionchemistry.chemical_compoundchemistrylawPhase (matter)0103 physical sciencesElectrodeOptoelectronicsNanorodChemical-bath deposition (CBD) contact injection current spreading length zinc oxide (ZnO) nanorods ZnO/GaN-based light-emitting diodes (LEDs) ZnO/GaN heterostructures.Electrical and Electronic EngineeringbusinessWurtzite crystal structureLight-emitting diodeDiode
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